1 5 - elm 5e401pa - s g e neral description f eatures maximum a bsolute ratings elm5e401pa - s uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. c ircuit single p-channel mosfet pin configuration parameter symbol limit unit drain - s ource voltage vdss -20 v gate - s ource v oltag e vgs 1 2 v conti nuous drain current t a = 25 c id -0.7 a t a = 7 0 c -0.4 pulsed d rain current idm -1.0 a power dissipation t c = 25 c pd 0.27 w t c = 7 0 c 0.16 j unction and storage temperature range tj , tstg - 55 to 150 c ? vds =- 2 0v ? id =- 0.7 a ? rds (on) = 620 m (vgs =- 4.5 v) ? rds (on) = 86 0 m (vgs =- 2 .5v) ? rds (on) = 145 0 m (vgs =- 1.8 v) 1 2 3 so t -5 23 (top vi ew) pin no. pin name 1 gate 2 source 3 drain s g d t a = 25 c . u nless otherwise noted.
2 5 - elm 5e401pa - s electrical characteristics parameter symbol condition min. typ. max. unit static parameters drain - s ource breakdown voltage bvdss vgs = 0v, id =- 25 0 a - 2 0 v zero g ate voltage drain current idss vds =- 20 v, vgs = 0v -1 a vds =- 20 v, vgs = 0v, t a = 8 5 c -5 gate - b ody leakage current ig s s vds = 0v , vgs = 1 2 v 10 0 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -0.4 -1.0 v on s tate drain current i d ( on ) vgs =- 4.5 v, vds =- 5 v -0.7 a static drain - s ource on - r esistance r d s (o n ) vgs =- 4.5 v, i d =-0. 6 a 50 0 620 m vgs =- 2 .5v, id =-0. 5 a 7 00 86 0 vgs =- 1.8 v, id =-0. 4 a 100 0 1450 forward transconductance gfs vds =- 10 v, id =- 0.4 a 1 s diode forward voltage vsd i s =- 0.15a , vgs = 0v -0.65 -1.20 v max. body - d iode continuous c urrent is -0 .3 a dynamic parameters input capacitance c iss vgs = 0v, vds =- 1 0 v, f = 1mh z 70 100 pf output capacitance c oss 20 pf reverse transfer capacitance c r ss 10 pf switching parameters total gate charge q g vgs =-4. 5 v, vds =- 1 0 v id =- 0. 25 a 1.0 1.3 nc gate - s ource charge q gs 0.1 nc gate - d rain charge q gd 0.3 nc turn - o n delay time t d (on) vgs =- 4.5 v, vds =- 1 0 v rl=30 , id = - 0. 2 a rgen = 10 10 15 ns turn - o n rise t ime t r 10 15 ns turn - o ff delay time t d ( of f ) 40 60 ns turn - o ff fall t ime t f 30 50 ns single p-channel mosfet t a = 25 c . u nless otherwise noted.
3 5 - elm 5e401pa - s typical electrical and thermal characteristics single p-channel mosfet a f p 1 0 1 3 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j a n . 2 0 1 1 p a g e 3 t y p i c a l c h a r a c t e r i s t i c s
4 5 - elm 5e401pa - s single p-channel mosfet a f p 1 0 1 3 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j a n . 2 0 1 1 p a g e 4 t y p i c a l c h a r a c t e r i s t i c s
5 5 - elm 5e401pa - s t est circuit and w aveform single p-channel mosfet a f p 1 0 1 3 2 0 v p - c h a n n e l a l f a - m o s t e c h n o l o g y e n h a n c e m e n t m o d e m o s f e t ? a l f a - m o s t e c h n o l o g y c o r p . w w w . a l f a - m o s . c o m r e v . a j a n . 2 0 1 1 p a g e 5 t y p i c a l c h a r a c t e r i s t i c s
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